NANOSTRUCTURED TMDs

TABLE OF TECHNICAL SPECIFICATIONS

• Diameter = 100 nm
• Pitch (grating period) = 200 nm
• TMD thickness = 10-100 nm
  (specified by customer)
• Flake size approximately 100x100 microns
• Substrate = thermally oxidized silicon
• Groove depth (TMD Grating) = from 10 nm and up to TMD flake thickness

PRODUCT DESCRIPTION

We offer nanostructured TMDs fabricated using a combination of electron beam lithography and reactive ion etching.

The standard list of available TMDs include several semiconductors and superconductors: MoS₂, WS₂, MoSe₂, WSe₂, MoTe₂, ReS₂ and TaS₂.

The nanostructured pattern is predefined by the electron beam lithography file, which can be both made by us or provided by a customer.

PRICING

Other TMDs are available upon request or can be provided by a customer. Contact us to discuss the price of our service.